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| ? 2017 microchip technology inc. ds20005607a-page 1 MIC45212-1/-2 features ? no compensation required ? up to 14a output current ? >93% peak efficiency ? output voltage: 0.8v to 0.85*v in with 1% accuracy ? adjustable switching frequency from 200 khz to 600 khz ? enable input and open-drain power good output ? hyper speed control ? (mic45212-2) architecture enables fast transient response ? hyperlight load ? (MIC45212-1) improves light load efficiency ? supports safe start-up into pre-biased output ? -40c to +125c junction temperature range ? thermal shutdown protection ? short-circuit protection with hiccup mode ? adjustable current limit ? available in 64-pin 12 mm x 12 mm x 4 mm qfn package applications ? high-power density point-of-load conversion ? servers, routers, networking and base stations ? fpgas, dsp and low-voltage asic power supplies ? industrial and medical equipment general description the mic45212 is a synchr onous, step-down regulator module, featuring a unique adaptive on-time control architecture. the module incorporates a dc-to-dc controller, power mosfets, bootstrap diode, bootstrap capacitor and an inductor in a single package, simplifying the design and layout process for the end user. this highly integrated solution expedites system design and improves product time-to-market. the internal mosfets and inductor are optimized to achieve high efficiency at a low output voltage. the fully optimized design can deliver up to 14a current under a wide input voltage range of 4.5v to 26v, without requiring additional cooling. the MIC45212-1 uses the hyperlight load (hll) while the mic45212-2 uses the hyper speed control (hsc) architecture, which enables ultra-fast load transient response, allowing for a reduction of output capaci- tance. the mic45212 offers 1% output accuracy that can be adjusted from 0.8v to 0.85*v in with two external resistors. additional features include thermal shutdown protection, input undervo ltage lockout, adjustable current limit and short-circ uit protection. the mic45212 allows for safe start-up into a pre-biased output. data sheet and other support documentation can be found on the microchip web site at: www.microchip.com . typical application schematic r fb1 v out 0.8v to 0.85 * v in /up to 14a mic45212 v in 12v c out c in gnd pv in v out r fb2 fb sw i lim pgnd bst anode en freq on pg pv dd 5v dd r lim rib off v in c ff ria 26v, 14a dc-to-dc power module
MIC45212-1/-2 ds20005607a-page 2 ? 2017 microchip technology inc. package types 64 63 62 61 60 59 58 57 56 55 54 19 20 21 22 23 24 25 26 27 28 29 gnd gnd pv dd i lim 5v dd 5v dd freq v in en pg fb gnd bst bst v out keepout pv in pv in pv in pv in pv in pv in pv in pv in keepout sw sw sw pv dd pgnd pgnd pgnd sw v out v out v out v out v out 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 v out epad pv in epad bst 16 17 18 30 31 32 53 52 51 33 34 35 pv in pv in pv in v out v out v out v out keepout v out anode keepout ria ria rib anode v out v out sw sw sw sw sw sw sw anode bst nc sw MIC45212-1/-2 64-pin 12 mm x 12 mm x 4 mm qfn (top view) ? 2017 microchip technology inc. ds20005607a-page 3 MIC45212-1/-2 functional block diagram 5v dd pv dd i lim i lim v in v dd pv dd v in pv in v out MIC45212-1/-2 ds20005607a-page 4 ? 2017 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings ? v pvin , v vin to pgnd........................................................................................................................ ......... ?0.3v to +30v v pvdd , v 5vdd , v anode to pgnd ................................................................................................................ ?0.3v t o +6v v sw , v freq , v ilim , v en to pgnd .................................................................................................. ?0.3v to (v in + 0.3v) v bst to v sw ............................................................................................................................... .................. ?0.3v to +6v v bst to pgnd ............................................................................................................................... ........... ?0.3v to +36v v pg to pgnd ....................................................................................................................... ....... ?0.3v to (5v dd + 0.3v) v fb , v rib to pgnd...................................................................................................................... ? 0.3v to (5v dd + 0.3v) pgnd to gnd .................................................................................................................... ....................... -0.3v to +0.3v junction temperature........................................................................................................... ................................ +150c storage temperature (t s ) ................ .............. .............. .............. .............. .............. .............. .............. ... ?65c to +150c lead temperature (soldering, 10s) .............................................................................................. ........................ +260c operating ratings ( 1 ) supply voltage (v pvin, v vin ) ......................................................................................................................... 4.5v to 26v output current ................................................................................................................. .......................................... 14a enable input (v en ) .............................................................................................................................. .............. 0v to v in power-good (v pg ) .............................................................................................................................. ........... 0v to 5v dd junction temperature (t j )................ .............. .............. .............. .............. .............. .............. .............. ... ?40c to +125c junction thermal resistance ( 2 ) 12 mm x 12 mm x 4 mm qfn-64 ( ? ja ) ...........................................................................................................12.6c/w 12 mm x 12 mm 4 mm qfn-64 ( ? jc ) ................................................................................................................3.5c/w note 1: the device is not ensured to func tion outside the operating range. 2: ? ja and ? jc were measured using the mic45212 evaluation board. ?notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the de vice at those or any other conditions above those indi- cated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. ? 2017 microchip technology inc. ds20005607a-page 5 MIC45212-1/-2 table 1-1: electrical characteristics ( 1 ) electrical specifications: unless otherwise specified, v pvin = v vin ; v in = v en =12v; v out =3.3v; v bst ? v sw =5v; t j =+25c. boldface values indicate ?40c ? t j ? +125c. symbol parameter min. typ. max. units test conditions power supply input v in , v pvin input voltage range 4.5 ? 26 v? i q quiescent supply current (MIC45212-1) ?? 0.75 ma v fb =1.5v i q quiescent supply current (mic45212-2) ?2.1 3 ma v fb =1.5v i in operating current: mic45208-1 ?0.37? ma pv in =v in = 12v, v out = 1.8v, i out = 0a, f sw = 600 khz mic45208-2 ? 54 ? i shdn shutdown supply current ? 0.1 10 a sw = unconnected, v en = 0v 5v dd output v dd 5v dd output voltage 4.8 5.1 5.4 vv in = 7v to 26v, i 5vdd = 10 ma uvlo 5v dd uvlo threshold 3.8 4.2 4.6 vv 5vdd rising uvlo_hys 5v dd uvlo hysteresis ? 400 ? mv v 5vdd falling v dd(lr) ldo load regulation 0.6 2 3.6 % i 5vdd = 0 to 40 ma reference v fb feedback reference voltage 0.792 0.8 0.808 v t j =+25c 0.784 0.8 0.816 ?40c ? t j ? +125c i fb_bias feedback bias current ? 5 500 na v fb = 0.8v enable control en high en logic level high 1.8 ??v? en low en logic level low ? ? 0.6 v? en hys en hysteresis ? 200 ? mv ? i enbias en bias current ? 5 10 a v en = 12v oscillator f sw switching frequency 400 600 750 khz v freq =v in, i out = 2a ?350? v freq =50% v in, i out = 2a d max maximum duty cycle ? 85 ? % ? d min minimum duty cycle ? 0 ? % v fb = 1v t off(min) minimum off-time 140 200 260 ns ? soft start t ss soft start time ? 3 ? ms fb rising from 0v to 0.8v short-circuit protection v cl_offset current-limit threshold ?30 ?14 0 mv v fb = 0.79v v sc short-circuit threshold ?23 ?7 9 mv v fb =0v i cl current-limit source current 50 70 90 a v fb = 0.79v i sc short-circuit source current 25 35 45 a v fb =0v leakage i sw_leakage sw, bst leakage current ? ? 10 a ? i freq_leak freq leakage current ? ? 10 a ? note 1: specification for packaged product only. MIC45212-1/-2 ds20005607a-page 6 ? 2017 microchip technology inc. power good (pg) v pg_th pg threshold voltage 85 90 95 %v out sweep v fb from low-to-high v pg_hys pg hysteresis ? 6 ? %v out sweep v fb from high-to-low t pg_dly pg delay time ? 100 ? s sweep v fb from low-to-high v pg_low pg low voltage ? 70 200 mv v fb < 90% x v nom , i pg = 1 ma thermal protection t shd overtemperature shutdown ? 160 ? c t j rising t shd_hys overtemperature shutdown hysteresis ?15?c? table 1-1: electrical characteristics ( 1 ) (continued) electrical specifications: unless otherwise specified, v pvin = v vin ; v in = v en =12v; v out =3.3v; v bst ? v sw =5v; t j =+25c. boldface values indicate ?40c ? t j ? +125c. symbol parameter min. typ. max. units test conditions note 1: specification for packaged product only. ? 2017 microchip technology inc. ds20005607a-page 7 MIC45212-1/-2 2.0 typical performance curves note: unless otherwise indicated, v in = v en = 12v, v out = 1.8v, v bst ? v sw = 5v, t j = +25c. figure 2-1: v in operating supply current vs. input vo ltage (MIC45212-1). figure 2-2: v in operating supply current vs. temperature (mic45212-2). figure 2-3: v in shutdown current vs. input voltage. figure 2-4: v dd supply voltage vs. temperature. figure 2-5: enable threshold vs. temperature. figure 2-6: en bias current vs. temperature. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or ta bles, the data presented ma y be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outside the warranted range. MIC45212-1/-2 ds20005607a-page 8 ? 2017 microchip technology inc. note: unless otherwise indicated, v in = v en = 12v, v out = 1.8v, v bst ? v sw = 5v, t j = +25c. figure 2-7: feedback voltage vs. temperature. figure 2-8: output voltage vs.temperature. figure 2-9: switching frequency vs.temperature. figure 2-10: output peak current-limit vs. temperature. figure 2-11: efficiency vs. output current (MIC45212-1, v in = 5v). figure 2-12: efficiency vs. output current (MIC45212-1, v in = 12v). ? 2017 microchip technology inc. ds20005607a-page 9 MIC45212-1/-2 note: unless otherwise indicated, v in = v en = 12v, v out = 1.8v, v bst ? v sw = 5v, t j = +25c. figure 2-13: efficiency vs. output current (MIC45212-1, v in = 24v). figure 2-14: efficiency vs. output current (mic45212-2, v in = 5v). figure 2-15: efficiency vs. output current (mic45212-2, v in = 12v). figure 2-16: efficiency vs. output current (mic45212-2, v in = 24v). figure 2-17: ic power dissipation vs. output current (mic45212-2, v in = 5v). figure 2-18: ic power dissipation vs. output current (mic45212-2, v in = 12v). MIC45212-1/-2 ds20005607a-page 10 ? 2017 microchip technology inc. note: unless otherwise indicated, v in = v en = 12v, v out = 1.8v, v bst ? v sw = 5v, t j = +25c. figure 2-19: ic power dissipation vs. output current (mic45212-2, v in = 24v). figure 2-20: line regulation. figure 2-21: load regulation (MIC45212-1). ? 2017 microchip technology inc. ds20005607a-page 11 MIC45212-1/-2 note: unless otherwise indicated, v in = v en = 12v, v out = 1.8v, v bst ? v sw = 5v, t j = +25c. figure 2-22: v in soft turn-on. figure 2-23: v in soft turn-off. figure 2-24: enable turn-on delay and rise time. figure 2-25: enable turn-off delay. figure 2-26: v in start-up with pre-biased output. figure 2-27: enable turn-on/turn-off. v in = 12v v out = 1.8v i out = 14a time (2ms/div) i in (5a/div) v in (10v/div) v out (1v/div) p good (5v/div) vin soft turn on v in = 12v v out = 1.8v i out = 14a time (2ms/div) i in (5a/div) v in (10v/div) v out (1v/div) p good (5v/div) vin soft turn off v in = 12v v out = 1.8v i out = 14a time (2ms/div) v en (2v/div) v out (1v/div) i in (2a/div) y v in = 12v v out = 1.8v i out = 14a time (2ms/div) v en (2v/div) v out (1v/div) i in (2a/div) y v in = 12v v out = 1.8v i out = 1a v pre-bias = 0.5v time (8ms/div) v in (10v/div) v out (1v/div) p good (5v/div) pp v in = 12v v out = 1.8v i out = 14a time (8ms/div) v en (2v/div) v out (1v/div) i in (2a/div) ab e u o / u o MIC45212-1/-2 ds20005607a-page 12 ? 2017 microchip technology inc. note: unless otherwise indicated, v in = v en = 12v, v out = 1.8v, v bst ? v sw = 5v, t j = +25c. figure 2-28: power-up into short circuit. figure 2-29: enabled into short circuit. figure 2-30: short circuit during steady state with 14a load. figure 2-31: output recovery from short circuit. figure 2-32: peak current-limit threshold. figure 2-33: output recovery from thermal shutdown. v in = 12v v out = 1.8v i out = short = wire across output time (2ms/div) v in (10v/div) v out (20mv/div) power-up into short circuit i in (1a/div) v in = 12v v out = 1.8v i out = short = wire across output time (800s/div) v en (2v/div) v out (50mv/div) enabled into short circuit i in (200ma/div) v in = 12v v out = 1.8v time (2ms/div) v out (1v/div) short circuit i out (5a/div) pulse: 2hz; 0v - 3.3v; 20ms v in = 12v v out = 1.8v time (8ms/div) v out (1v/div) output recovery from short circuit i out (5a/div) pulse: 2hz; 0v - 3.3v; 20ms v in = 12v v out = 1.8v i pk-cl = 20.2a time (8ms/div) v out (1v/div) peak current limit threshold i out (10a/div) ? 2017 microchip technology inc. ds20005607a-page 13 MIC45212-1/-2 note: unless otherwise indicated, v in = v en = 12v, v out = 1.8v, v bst ? v sw = 5v, t j = +25c. figure 2-34: switching waveforms. figure 2-35: switching waveforms (MIC45212-1). figure 2-36: switching waveforms (i out = 0a, mic45212-2) figure 2-37: transient response (MIC45212-1). figure 2-38: transient response (mic45212-2). figure 2-39: inrush with c out = 3000 f. v in = 12v v out = 1.8v i out = 14a time (1s/div) v sw (5v/div) g i out (10a/div) v out (20mv/div) v in = 12v v out = 1.8v i out = 50ma time (20s/div) v sw (10v/div) switching waveforms (mic45212 1) i out (50ma/div) v out (20mv/div) ac-coupled v in = 12v v out = 1.8v i out = 0a time (1s/div) v sw (5v/div) g(,) i out (10a/div) v out (20mv/div) v in = 12v v out = 1.8v i out = 1a to 8a time (40s/div) v out (100mv/div) a s e t espo se ( c 5 ) i out (5a/div) di/dt = 2a/s c out = 2 x 100f + 270f pos v in = 12v v out = 1.8v i out = 7a to 14a time (40s/div) v out (100mv/div) p( ) i out (5a/div) di/dt = 2a/s c out = 2 x 100f + 270f pos v in = 12v v out = 1.8v i out = 14a time (8ms/div) v out (1v/div) out i in (2a/div) output ale cap, 3000f v en (2v/div) MIC45212-1/-2 ds20005607a-page 14 ? 2017 microchip technology inc. 3.0 pin descriptions the descriptions of the pins are listed in table 3-1 . table 3-1: pin function table mic45212 pin number pin name pin function 1, 56, 64 gnd analog ground: connect bottom fe edback resistor to gnd. gnd and pgnd are internally connected. 2, 3 pv dd pv dd : supply input for the internal low-side power mosfet driver. 4i lim current limit: connect a resistor between i lim and sw to program the current limit. 5, 6 pgnd power ground: pgnd is the return path for the step-down power module power stage. the pgnd pin connects to the sources of the internal low-side power mosfet, the negative terminals of input capacitors and the negative terminals of output capacitors. 7-10, 38-44 sw the sw pin connects directly to the switch node. due to the high-speed switching on this pin, the sw pin should be routed away from sensitive nodes. the sw pin also senses the current by monitoring the voltage across the low-side mosfet during off time. 12-22 pv in power input voltage: connection to the drain of the internal high-side power mosfet. connects an input capacitor from pv in to pgnd. 24-36 v out power output voltage: connected to the internal inductor. the output capacitor should be connected from this pin to pgnd, as close to the module as possible. 46, 47 ria ripple injection pin a: leave floating, no connection. 48 rib ripple injection pin b: connect this pin to fb. 49-51 anode anode bootstrap diode: anode connection of internal bootstrap diode; this pin should be connected to the pv dd pin. 52-54 bst connection to the internal bootstrap ci rcuitry and high-side power mosfet drive circuitry. leave floating, no connection. 55 nc no connection. 57 fb feedback: input to the transconductance amp lifier of the control loop. the fb pin is referenced to 0.8v. a resistor divider connec ting the feedback to the output is used to set the desired output voltage. connect the bottom resistor from fb to gnd. 58 pg power good: open-drain output. if used, c onnect to an external pull-up resistor of at least 10 kohm between pg and the external bias voltage. 59 en enable: a logic signal to enable or dis able the step-down regulator module operation. the en pin is ttl/cmos compatible. logi c high = enable, logic low = disable or shutdown. do not leave floating. 60 v in internal 5v linear regulator input: a 1 f ceramic capacitor from v in to gnd is required for decoupling. 61 freq switching frequency adjust: use a resistor divider from v in to gnd to program the switching frequency. connecting freq to v in sets frequency = 600 khz. 62, 63 5v dd internal +5v linear regulator output. powered by vin, 5vdd is the internal supply bus for the device. in the applications with vin <+5.5v, 5vdd should be tied to vin to bypass the linear regulator. 11, 23, 37, 45 keepout depopulated pin positions. ?pv in epad pv in exposed pad: internally connected to the pv in pins. ?v out epad v out exposed pad: internally connected to the v out pins. ? 2017 microchip technology inc. ds20005607a-page 15 MIC45212-1/-2 4.0 functional description the mic45212 is an a daptive on-time synchronous buck regulator module, built for high input voltage to low output voltage conversion applications. the mic45212 is designed to operate over a wide input voltage range, from 4.5v to 26v, and the output is adjustable with an external resistor divider. an adaptive on-time control scheme is employed to obtain a constant switching frequency in steady state and to simplify the control compensation. hiccup mode over- current protection is impl emented by sensing low-side mosfet?s r ds(on) . the device features internal soft start, enable, uvlo and thermal shutdown. the module has integrated switching fets, inductor, bootstrap diode, resistor, capacitor and controller. 4.1 theory of operation as shown in figure 4-1 , in association with equation 4-1 , the output voltage is sensed by the mic45212 feedback pin, fb, via the voltage dividers, r fb1 and r fb2 , and compared to a 0.8v reference volt- age, v ref , at the error comparator through a low-gain transconductance (g m ) amplifier. if the feedback voltage decreases and falls below 0.8v, then the error compara- tor will trigger the control logic and generate an on-time period. the on-time period length is predetermined by the ?fixed t on estimator? circuitry. figure 4-1: output voltage sense via fb pin. equation 4-1: on-time estimation at the end of the on-time period, the internal high-side driver turns off the high-side mosfet and the low-side driver turns on the low-side mosfet. in most cases, the off-time period length depends upon the feed- back voltage. when the feedback voltage decreases and the output of the g m amplifier falls below 0.8v, the on-time period is triggered and the off-time period ends. if the off-time period determined by the feed- back voltage, is less than the minimum off-time t off(min) , which is about 200ns, the mic 45212 control logic will apply the t off(min) instead. t off(min) is required to maintain enough energy in the boost capacitor (c bst ) to drive the high-side mosfet. the maximum duty cycle is obtained from the 200 ns t off(min) : equation 4-2: maximum duty cycle it is not recommended to use the mic45212 device with an off-time close to t off(min) during steady-state operation. the adaptive on-time control scheme results in a constant switching frequen cy in the mic45212 during steady-state operation. also, the minimum t on results in a lower switching frequency in high v in to v out applications. during load transients, the switching frequency is changed due to the varying off-time. to illustrate the control loop operation, we will analyze both the steady-state and load transient scenarios. for easy analysis, the gain of the g m amplifier is assumed to be 1. with this assumpti on, the inverting input of the error comparator is the same as the feedback voltage. figure 4-2 shows the mic45212 control loop timing during steady-state operatio n. during steady-state operation, the g m amplifier senses the feedback volt- age ripple, which is proportional to the output voltage ripple, plus injected voltage ripple, to trigger the on-time period. the on-time is predetermined by the t on estimator. the termination of the off-time is controlled by the feedback volt age. at the valley of the feedback voltage ripple, which occurs when v fb falls below v ref , the off-time period ends and the next on-time period is triggered through the control logic circuitry. ? + + ? compensation comp g m ea fb r fb1 r fb2 v ref 0.8v + ? t on(estimated) = v out v in ? f sw where: v out = output voltage v in = power stage input voltage f sw = switching frequency d max = t s ? t off(min) t s 200 ns t s = 1 ? where: t s = 1/f sw MIC45212-1/-2 ds20005607a-page 16 ? 2017 microchip technology inc. figure 4-2: mic45212 control loop timing. figure 4-3 shows the operation of the mic45212 during a load transient. the output voltage drops due to the sudden load increase, which causes the v fb to be less than v ref . this will cause the error comparator to trig- ger an on-time period. at the end of the on-time period, a minimum off-time, t off(min) , is generated to charge the bootstrap capacitor (c bst ) since the feed- back voltage is still below v ref . then, the next on-time period is triggered due to the low feedback voltage. therefore, the switching frequency changes during the load transient, but returns to the nominal fixed frequency once the output has stabilized at the new load current level. with the varying duty cycle and switching frequency, the output recovery time is fast and the output voltage deviatio n is small. note that the instantaneous switching frequency during load tran- sient remains bounded and cannot increase arbitrarily. the minimum is limited by t on + t off(min) . because the variation in v out is relatively limited during load transient, t on stays virtually close to its steady-state value. figure 4-3: mic45212 load transient response. unlike true current mode co ntrol, the mic45212 uses the output voltage ripple to trigger an on-time period. the output voltage ripple is proportional to the inductor current ripple if the esr of the output capacitor is large enough. in order to meet the stability requirements, the mic45212 feedback voltage ripple should be in phase with the inductor current ripple, and is large enough to be sensed by the g m amplifier and the error compara- tor. the recommended feedback voltage ripple is 20 mv ~ 100 mv over full input voltage range. if a low-esr output capacitor is selected, then the feed- back voltage ripple may be too small to be sensed by the g m amplifier and the error comparator. also, the output voltage ripple and the feedback voltage ripple are not necessarily in phase with the inductor current ripple if the esr of the output capacitor is very low. in these cases, ripple injection is required to ensure proper operation. please refer to section 5.5 ?ripple injection? in section 5.0 ?applica tion information? for more details about the ripple injection technique. 4.2 discontinuous mode (MIC45212-1 only) in continuous mode, the inductor current is always greater than zero; however, at light loads, the MIC45212-1 is able to force the inductor current to operate in discontinuous mode. discontinuous mode is where the inductor current falls to zero, as indicated by trace (i l ) shown in figure 4-4 . during this period, the effi- ciency is optimized by shutting down all the non-essential circuits and minimizing the supply current as the switching frequency is reduced. the MIC45212-1 wakes up and turns on the high-side mosfet when the feedback voltage, v fb , drops below 0.8v. the MIC45212-1 has a zero-crossing (zc) comparator that monitors the inductor current by sensing the voltage drop across the low-side mosfet during its on-time. if the v fb > 0.8v and the inductor current goes slightly negative, t hen the MIC45212-1 automati- cally powers down most of the ic circuitry and goes into a low-power mode. once the MIC45212-1 goes into discontinuous mode, both dl and dh are low, which turns off the high-side and low-side mosfets. the load current is supplied by the output capacitors and v out drops. if the drop of v out causes v fb to go below v ref , then all the circuits will wake-up into normal continuous mode. first, the bias currents of most circuits reduced during the discontinuous mode are restored, and then a t on pulse is triggered before the driver s are turned on to avoid any possible glitches. finally, the high-side driver is turned on. figure 4-4 shows the control loop timing in discontinuous mode. i l i out v out v fb v ref dh ? i l(pp) ? v out(pp) = esr cout ?? ? i l(pp) ? v fb(pp) = ? v out(pp) ? r fb2 r fb1 + r fb2 trigger on-time if v fb is below v ref estimated on-time full load no load i out v out v fb dh v ref t off(min) ? 2017 microchip technology inc. ds20005607a-page 17 MIC45212-1/-2 figure 4-4: MIC45212-1 control loop timing (discontinuous mode). during discontinuous mode, the bias current of most circuits is substantially reduced. as a result, the total power supply current during discontinuous mode is only about 370 a, allowing the mic45212 -1 to achieve high efficiency in light load applications. 4.3 soft start soft start reduces the input power supply surge current at start-up by controlling t he output voltage rise time. the input surge appears while the output capacitor is charged up. the mic45212 implements an internal digital soft start by making the 0.8v reference voltage, v ref , ramp from 0 to 100% in about 3 ms with 9.7 mv steps. therefore, the output voltage is controlled to increase slowly by a staircase v fb ramp. once the soft start cycle ends, the related circuitry is disabled to reduce current consump- tion. pv dd must be powered up at the same time or after v in to make the soft start function correctly. 4.4 current limit the mic45212 uses the r ds(on) of the low-side mosfet and the external resistor, connected from the i lim pin to the sw node, to set the current limit. figure 4-5: mic45212 current-limiting circuit. in each switching cycle of the mic45212, the inductor current is sensed by monitoring the low-side mosfet in the off period. the sensed voltage, v ilim , is com- pared with the power ground (pgnd) after a blanking time of 150 ns. in this way, the drop voltage over the resistor, r15 (v cl ), is compared with the drop over the bottom fet generating the short current limit. the small capacitor (c15) connected from the i lim pin to pgnd filters the switching node ringing during the off-time, allowing a better short limit measurement. the time constant created by r15 and c15 should be much less than the minimum off-time. the v cl drop allows programming of the short limit through the value of the resistor (r15). if the absolute value of the voltage drop on the bottom fet becomes greater than v cl , and the v ilim falls below pgnd, an overcurrent is triggered causing the ic to enter hiccup mode. the hiccup mode sequence, including the soft start, reduces the stress on the switching fets, and protects the load and supply for severe short conditions. the short-circuit current limit can be programmed by using equation 4-3 . i l crosses 0 and v fb > 0.8 discontinuous mode starts v fb < 0.8v, wake-up from discontinuous mode i l 0 v fb v ref zc dh dl estimated on-time v in sw fb v in mic45212 bst c in pgnd sw i lim cs r15 c15 MIC45212-1/-2 ds20005607a-page 18 ? 2017 microchip technology inc. equation 4-3: programming current limit the peak-to-peak inductor current ripple is: equation 4-4: peak-to-peak inductor current ripple the mic45212 has a 0.6 h inductor integrated into the module. in case of a hard short, the short limit is folded down to allow an indefinite hard short on the out- put without any destructive effect. it is mandatory to make sure that the inductor current used to charge the output capacitance during soft start is under the folded short limit; otherwise, the supply will go into hiccup mode and may not finish th e soft start successfully. the mosfet r ds(on) varies 30% to 40% with temperature; therefore, it is recommended to add a 50% margin to i clim in equation 4-3 to avoid false current limiting due to increased mosfet junction temperature rise. with r15 = 1.69 k ? and c15 = 15 pf, the typical output current limit is 16.8a. r15 = (i clim + ? i l(pp) ? 0.5) ? r ds(on) + v cl_offset i cl where: i clim = desired current limit r ds(on) = on resistance of low-side power mosfet, 6 m ? typically v cl_offset = current-limit threshold (typical absolute value is 14 mv per ta b l e 1 - 1 ) i cl = current-limit source cu rrent (typical value is 70 a per table 1-1 ) ? i l(pp) = inductor current peak-to-peak; since the inductor is integrated, use equation 4-4 to calculate the inductor ripple current ? i l(pp) = v out ? (v in(max) ? v out ) v in(max) ? f sw ? l ? 2017 microchip technology inc. ds20005607a-page 19 MIC45212-1/-2 5.0 application information 5.1 setting the switching frequency the mic45212 switching frequency can be adjusted by changing the value of resistors, r1 and r2. figure 5-1: switching frequency adjustment. equation 5-1 gives the estimated switching frequency: equation 5-1: estim ated switching frequency figure 5-2: switching frequency vs. r2. 5.2 output capacitor selection the type of output capacitor is usually determined by the application and its equivalent series resistance (esr). voltage and rms current capability are two other important factors for selecting the output capaci- tor. recommended capacitor types are mlcc, os-con and poscap. the output capacitor?s esr is usually the main cause of the output ripple. the mic45212 requires ripple injection and the output capacitor esr affects the control loop from a stability point of view. the maximum value of esr is calculated as in equation 5-2 : equation 5-2: esr maximum value the total output ripple is a combination of the esr and output capacitance. the total ripple is calculated in equation 5-3 : equation 5-3: total output ripple v in sw fb mic45212 bst c in pgnd freq cs r1 r2 f sw = f o ? r2 r1 + r2 where: f o = 600 khz (typical per table 1-1: ?electrical characteristics (1)? table) r1 = 100 k ? is recommended r2 = needs to be selected in order to set the required switching frequency esr c out ? ? v out(pp) ? i l(pp) where: ? v out(pp) = peak-to-peak output voltage ripple ? i l(pp) = peak-to-peak inductor current ripple ? v out(pp) = ? i l(pp) c out ? f sw ? 8 + ( ? i l(pp) ? esr c out ) 2 ? ? ? ? ? 2 where: c out = output capacitance value f sw = switching frequency MIC45212-1/-2 ds20005607a-page 20 ? 2017 microchip technology inc. as described in section 4.1 ?theory of operation? in section 4.0 ?functional description? , the mic45212 requires at least a 20 mv peak-to-peak ripple at the fb pin to make the g m amplifier and the error comparator behave properly. also, the output voltage ripple should be in phase with the inductor current. therefore, the output voltage ripple caused by the output capacitors? value should be much smaller than the ripple caused by the output capacitor, esr. if low-esr capacitors, such as ceramic capacitors, are selected as the output capacitors, a ripple injection method should be applied to provide enough feedback voltage ripple. please refer to section 5.5 ?ripple injection? in section 5.0 ?application information? for more details. the output capacitor rms current is calculated in equation 5-4 : equation 5-4: output capacitor rms current the power dissipated in the output capacitor is: equation 5-5: dissipated power in output capacitor 5.3 input capacitor selection the input capacitor for the power stage input, pv in , should be selected for ripple current rating and voltage rating. the input voltage ripple will primarily depend on the input capacitor?s esr. the peak input current is equal to the peak inductor current, so: equation 5-6: configuring ripple current and voltage ratings the input capacitor must be rated for the input current ripple. the rms value of input capacitor current is determined at the maximum output current. assuming the peak-to-peak inductor current ripple is low: equation 5-7: rms value of input capacitor current the power dissipated in the input capacitor is: equation 5-8: power dissipated in input capacitor the general rule is to pick the capacitor with a ripple current rating equal to or greater than the calculated worst-case rms capacitor current. equation 5-9 should be used to calculate the input capacitor. also, it is recommended to keep some margin on the calculated value: equation 5-9: input capacitor calculation 5.4 output voltage setting components the mic45212 requires two resistors to set the output voltage, as shown in figure 5-3 : figure 5-3: voltage/divider configuration. ? i l(pp) ? 12 i c out (rms) = p diss(c out ) = i c out (rms) 2 ?? esr c out ? v in = i l(pk) ? esr c in i c in (rms) ?? i out(max) ??? ? d ??? (1 ? d) where: d = duty cycle p diss(c in (rms)) = i c in (rms) 2 ? esr c in c in ? i out(max) ??? (1 ? d) f sw ? dv where: dv = input ripple f sw = switching frequency r fb1 r fb2 fb v ref g m amp ? 2017 microchip technology inc. ds20005607a-page 21 MIC45212-1/-2 the output voltage is determined by equation 5-10 : equation 5-10: output voltage determination a typical value of r fb1 used on the standard evaluation board is 10 k ? . if r fb1 is too large, it may allow noise to be introduced into the voltage feedback loop. if r fb1 is too small in value, it will decrease the efficiency of the power supply, especially at light loads. once r fb1 is selected, r fb2 can be calculated using equation 5-11 : equation 5-11: calculating r fb2 for fixed r fb1 = 10 k ? , the output voltage can be selected by r fb2 . ta b l e 5 - 1 provides r fb2 values for some common output voltages. table 5-1: v out programming resistor look-up 5.5 ripple injection the v fb ripple required for proper operation of the mic45212 g m amplifier and error comparator is 20 mv to 100 mv. however, the output voltage ripple is gener- ally too small to provide enough ripple amplitude at the fb pin and this issue is more visible in lower output voltage applications. if the feedback voltage ripple is so small that the g m amplifier and error comparator cannot sense it, then the mic45212 will lose control and the output voltage is not regulat ed. in order to have some amount of v fb ripple, a ripple injection method is applied for low output voltage ripple applications. the applications are divided into two situations according to the amount of the feedback voltage ripple: 1. enough ripple at the feedback voltage due to the large esr of the output capacitors: as shown in figure 5-4 , the converter is stable without any ripple injection. figure 5-4: enough ripple at fb from esr. the feedback voltage ripple is: equation 5-12: feedback voltage ripple 2. there is virtually inadequate or no ripple at the fb pin voltage due to the very low-esr of the output capacitors; such is the case with the ceramic output capacitor. in this case, the v fb ripple waveform needs to be generated by injecting a suitable signal. mic45212 has provi- sions to enable an internal series rc injection network, r inj and c inj , as shown in figure 5-5 , by connecting rib to the fb pin. this network injects a square wave current waveform into the fb pin, which by means of integration across the capacitor (c14), generates an appropriate sawtooth fb ripple waveform. figure 5-5: internal ripple injection at fb via rib pin. r fb2 v out open 0.8v 40.2 k ? 1.0v 20 k ? 1.2v 11.5 k ? 1.5v 8.06 k ? 1.8v 4.75 k ? 2.5v 3.24 k ? 3.3v 1.91 k ? 5.0v v out = v fb ? 1 + r fb1 r fb2 ? ? ? ? where: v fb = 0.8v r fb2 = v fb ? r fb1 v out ? v fb r fb1 r fb2 esr c out v out fb mic45212 ? v fb(pp) ? r fb2 r fb1 ? r fb2 ? esr c out ? ? i l(pp) where: ? i l(pp) = the peak-to-peak value of the inductor current ripple r fb1 r fb2 esr c out v out fb mic45212 c14 rib ria sw r inj c inj MIC45212-1/-2 ds20005607a-page 22 ? 2017 microchip technology inc. the injected ripple is: equation 5-13: injected ripple in equation 5-13 and equation 5-14 , it is assumed that the time constant associated with c14 must be much greater than the switching period: equation 5-14: condition on time constant of c14 if the voltage divider resistors, r fb1 and r fb2 , are in the k ? range, then a c14 of 1 nf to 100 nf can easily satisfy the large time constant requirements. ? v fb(pp) ?? v in ? k div ? d ? (1 ? d) ? 1 f sw ? ? k div = r fb1 //r fb2 r inj + r fb1 //r fb2 where: v in = power stage input voltage d = duty cycle f sw = switching frequency ? = (r fb1 //r fb2 //r inj ) ? c14 r inj = 10 k ? c inj = 0.1 f 1 f sw ??? t ? =<<1 ? 2017 microchip technology inc. ds20005607a-page 23 MIC45212-1/-2 5.6 thermal measurements and safe operating area (soa) measuring the ic?s case temperature is recommended to ensure it is within its operating limits. although this might seem like a very element ary task, it is easy to get erroneous results. the most common mistake is to use the standard thermal couple that comes with a thermal meter. this thermal couple wire gauge is large, typically 22 gauge, and behaves like a heat sink, resulting in a lower case measurement. two methods of temperatur e measurement are using a smaller thermal couple wire or an infrared thermometer. if a thermal couple wire is us ed, it must be constructed of 36-gauge wire or higher (smaller wire size) to minimize the wire heat sinking effect. in addition, the thermal couple tip must be covered in either thermal grease or thermal glue to make sure that the thermal couple junction is making good contact with the case of the ic. omega ? engineering brand thermal couple (5sc-tt-k-36-36) is adequat e for most applications. wherever possible, an infrared thermometer is recom- mended. the measurement spot size of most infrared thermometers is too large for an accurate reading on a small form factor ic. however, an ir thermometer from optris ? has a 1 mm spot size, which makes it a good choice for measuring the hottest point on the case. an optional stand makes it easy to hold the beam on the ic for long periods of time. the safe operating area (soa) of the mic45212 is shown in figure 5-6 through figure 5-10 . these thermal measurements were taken on the mic45212 evaluation board. since the mic45212 is an entire system com- prised of a switching regulator controller, mosfets and inductor, the part needs to be considered as a system. the soa curves will give guidance to reasonable use of the mic45212. soa curves should only be used as a point of refer- ence. soa data was acquired using the mic45212 evaluation board. thermal performance depends on the pcb layout, board size, copper thickness, number of thermal vias and actual airflow. figure 5-6: mic45212 power derating vs. airflow (5 v in to 1.5 v out ). figure 5-7: mic45212 power derating vs. airflow (12 v in to 1.5 v out ). figure 5-8: mic45212 power derating vs. airflow (12 v in to 3.3 v out) . MIC45212-1/-2 ds20005607a-page 24 ? 2017 microchip technology inc. figure 5-9: mic45212 power derating vs. airflow (24 v in to 1.5 v out ). figure 5-10: mic45212 power derating vs. airflow (24 v in to 3.3 v out ). ? 2017 microchip technology inc. ds20005607a-page 25 MIC45212-1/-2 6.0 packaging information 6.1 package marking information 64-lead 12 mm x 12 mm b2qfn xxxxx-xxxx wnnn example legend: xx...x product code or cust omer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec ? designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. , , pin one index is identified by a dot, delta up, or delta down (triangle mark). note : in the event the full microchip part numbe r cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific info rmation. package may or may not include the corporate logo. underbar (_) and/or overbar ( ? ) symbol may not be to scale. 3 e 3 e mic 45212-1ymp 1256 mic 64-lead 12 mm x 12 mm b2qfn xxxxx-xxxx wnnn example mic 45212-2ymp 1256 mic MIC45212-1/-2 ds20005607a-page 26 ? 2017 microchip technology inc. 6.2 package details the following sections give the technical details of the package. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging. drawing # b2qfn1212-64ld-pl-1 unit mm lead frame copper lead finish matte tin ? 2017 microchip technology inc. ds20005607a-page 27 MIC45212-1/-2 MIC45212-1/-2 ds20005607a-page 28 ? 2017 microchip technology inc. ? 2017 microchip technology inc. ds20005607a-page 29 MIC45212-1/-2 6.3 thermally enhanced landing pattern note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging. MIC45212-1/-2 ds20005607a-page 30 ? 2017 microchip technology inc. 6.3 thermally enhanced landing pattern (continued) note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging. ? 2017 microchip technology inc. ds20005607a-page 31 MIC45212-1/-2 appendix a: revision history revision a (november 2017) ? converted micrel docu ment MIC45212-1/-2 to microchip data sheet ds20005607a. ? minor text changes throughout document. MIC45212-1/-2 ds20005607a-page 32 ? 2017 microchip technology inc. notes: ? 2017 microchip technology inc. ds20005607a-page 33 MIC45212-1/-2 product identification system to order or obtain information, e.g., on pricing or delivery, contact your local microchip representative or sales office . examples: a) MIC45212-1ymp-t1: mic45212, hll, 64-pin b2qfn, 100/reel b) MIC45212-1ymp-tr: mic45212, hll, 64-pin b2qfn, 750/reel c) mic45212-2ymp-t1: mic45212,hsc, 64-pin b2qfn, 100/reel d) mic45212-2ymp-tr: mic45212,hsc, 64-pin b2qfn, 750/reel part no. x x x package device device: mic45212: 26v, 14a dc-to-dc power module option: 1=hll 2=hsc package: ymp = 64-pin 12 mm x 12 mm b2qfn media type: t1 = 100/reel tr = 750/reel x option ? xx media ? type MIC45212-1/-2 ds20005607a-page 34 ? 2017 microchip technology inc. notes: ? 2017 microchip technology inc. ds20005607a-page 35 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights unless otherwise stated. trademarks the microchip name and logo, the microchip logo, anyrate, avr, avr logo, avr freaks, beaconthings, bitcloud, cryptomemory, cryptorf, dspic, flashflex, flexpwr, heldo, jukeblox, k ee l oq , k ee l oq logo, kleer, lancheck, link md, maxstylus, maxtouch, medialb, megaavr, most, most logo, mplab, optolyzer, pic, picopower, picstart, pic32 logo, prochip designer, qtouch, righttouch, sam-ba, spynic, sst, sst logo, superflash, tinyavr, uni/o, and xmega are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. clockworks, the embedded control solutions company, ethersynch, hyper speed control, hyperlight load, intellimos, mtouch, precision edge, and quiet-wire are registered trademarks of microchip technology incorporated in the u.s.a. adjacent key suppression, aks, analog-for-the-digital age, any capacitor, anyin, anyout, bodycom, chipkit, chipkit logo, codeguard, cryptoauthentication, cryptocompanion, cryptocontroller, dspicdem, dspicdem.net, dynamic average matching, dam, ecan, ethergreen, in-circuit serial programming, icsp, inter-chip connectivity, jitterblocker, kleernet, kleernet logo, mindi, miwi, motorbench, mpasm, mpf, mplab certified logo, mplib, mplink, multitrak, netdetach, omniscient code generation, picdem, picdem.net, pickit, pictail, puresilicon, qmatrix, righttouch logo, real ice, ripple blocker, sam-ice, serial quad i/o, smart-i.s., sqi, superswitcher, superswitcher ii, total endurance, tsharc, usbcheck, varisense, viewspan, wiperlock, wireless dna, and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. gestic is a registered trademark of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2017, microchip technology incorporated, all rights reserved. isbn: 978-1-5224-2360-7 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of pr oducts is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip pr oducts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving t he code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwar e or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microper ipherals, nonvolatile memory and analog products. in addition, microchi p?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem by dnv == iso/ts 16949 == ds20005607a-page 36 ? 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